NGTB30N60FWG PDF даташит
Спецификация NGTB30N60FWG изготовлена «ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )». |
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Детали детали
Номер произв | NGTB30N60FWG |
Описание | IGBT ( Insulated Gate Bipolar Transistor ) |
Производители | ON Semiconductor |
логотип |
10 Pages
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NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 300 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
60
30
IFM 120 A
tSC 5 ms
VGE
$20
V
$30
PD W
167
67
Operating junction temperature
range
TJ −55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.45 V
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60FWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
Publication Order Number:
NGTB30N60FW/D
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NGTB30N60FWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.75
1.06
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VGE = VCE, IC = 200 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 25°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.25
−
4.5
−
−
−
−
−
−
Typ
−
1.45
1.75
5.5
−
−
−
4100
150
95
170
34
83
81
31
190
110
0.65
0.65
1.30
80
32
200
230
0.80
1.1
1.90
Max
−
1.70
−
6.5
0.2
2
100
−
−
−
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
http://onsemi.com
2
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NGTB30N60FWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
Symbol Min Typ Max Unit
VF
1.45 1.90 2.35
V
trr 72 ns
Qrr 15 mC
Irrm 6 A
http://onsemi.com
3
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