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NGTB30N60FWG PDF даташит

Спецификация NGTB30N60FWG изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «IGBT ( Insulated Gate Bipolar Transistor )».

Детали детали

Номер произв NGTB30N60FWG
Описание IGBT ( Insulated Gate Bipolar Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NGTB30N60FWG Даташит, Описание, Даташиты
NGTB30N60FWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Optimized for Very Low VCEsat
Low Switching Loss Reduces System Power Dissipation
Soft Fast Reverse Recovery Diode
5 ms ShortCircuit Capability
These are PbFree Devices
Typical Applications
Power Factor Correction
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
Diode Pulsed Current
Tpulse Limited by TJmax
Shortcircuit withstand time
VGE = 15 V, VCE = 300 V,
TJ +150°C
Gateemitter voltage
Transient Gate Emitter Voltage
(tp = 5 ms, D < 0.010)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
ICM 120 A
IF A
60
30
IFM 120 A
tSC 5 ms
VGE
$20
V
$30
PD W
167
67
Operating junction temperature
range
TJ 55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.45 V
C
G
E
G
C
E
TO247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60F
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB30N60FWG
Package
TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 1
1
Publication Order Number:
NGTB30N60FW/D









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NGTB30N60FWG Даташит, Описание, Даташиты
NGTB30N60FWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
Symbol
RqJC
RqJC
RqJA
Value
0.75
1.06
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VGE = VCE, IC = 200 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
VGE = 20 V , VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 25°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Total switching loss
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Min
600
1.25
4.5
Typ
1.45
1.75
5.5
4100
150
95
170
34
83
81
31
190
110
0.65
0.65
1.30
80
32
200
230
0.80
1.1
1.90
Max
1.70
6.5
0.2
2
100
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
http://onsemi.com
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NGTB30N60FWG Даташит, Описание, Даташиты
NGTB30N60FWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
TJ = 25°C
IF = 30 A, VR = 200 V
diF/dt = 200 A/ms
Symbol Min Typ Max Unit
VF
1.45 1.90 2.35
V
trr 72 ns
Qrr 15 mC
Irrm 6 A
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NGTB30N60FWGIGBT ( Insulated Gate Bipolar Transistor )ON Semiconductor
ON Semiconductor

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