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даташит BC817-40L PDF ( Datasheet )

BC817-40L Datasheet Download - ON Semiconductor

Номер произв BC817-40L
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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BC817-40L Даташит, Описание, Даташиты
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 12
http://oneic.com/
1
Publication Order Number:
BC81716LT1/D







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BC817-40L Даташит, Описание, Даташиты
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA)
Collector Emitter Breakdown Voltage
(VEB = 0, IC = 10 mA)
Emitter Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
Collector Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
Base Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V)
SMALLSIGNAL CHARACTERISTICS
BC81716, SBC81716
BC81725, SBC81725
BC81740, SBC81740
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Min Typ Max
45
50
5.0
− − 100
− − 5.0
100 250
160 400
250 600
40
− − 0.7
− − 1.2
100
10
Unit
V
V
V
nA
mA
V
V
MHz
pF
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping
BC81716LT1G
BC81716LT3G
SBC81716LT3
3000 / Tape & Reel
6A
SOT23
(PbFree)
10,000 / Tape & Reel
BC81725LT1G
SBC81725LT1G
BC81725LT3G
SBC81725LT3G
3000 / Tape & Reel
6B
SOT23
(PbFree)
10,000 / Tape & Reel
BC81740LT1G
SBC81740LT1G
BC81740LT3G
SBC81740LT3G
3000 / Tape & Reel
6C
SOT23
(PbFree)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://oneic.com/
http://onsemi.com
2







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BC817-40L Даташит, Описание, Даташиты
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
TYPICAL CHARACTERISTICS BC81716L, SBC81716L
300
150°C
VCE = 1 V
1
IC/IB = 10
200 25°C
100 55°C
150°C
25°C
0.1 55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
55°C
25°C
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
55°C
0.8 25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1
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http://onsemi.com
3










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