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Número de pieza | 6MBP50VBA060-50 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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6MBP50VBA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 50A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 200
DC Ic
-
Collector Current
1ms
Ic pulse
-
Duty=100% (*2) -Ic
-
Collector Power Dissipation
1 device (*3)
Pc
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Mounting (M4) -
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1minute.
Max.
600
400
50
100
50
169
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1
1 page 6MBP50VBA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. collector-Emitter voltage
Tj=25ºC [Chip] (typ.)
100
80 Vcc=15V
Vcc=17V
Vcc=13V
60
40
20
0
0 0.5 1 1.5 2 2.5
Collector-Emitter voltage : VCE [V]
Collector current vs. collector-Emitter voltage
Tj=125ºC [Chip] (typ.)
100
80 Vcc=15V
Vcc=17V
60
Vcc=13V
40
20
0
0 0.5 1 1.5 2 2.5
Collector-Emitter voltage : VCE [V]
Forward current vs. Forward voltage
[Chip] (typ.)
100
80
Tj=125ºC
Tj=25ºC
60
40
20
0
0 0.5 1 1.5 2 2.5
Forward voltage : VF [V]
5
Collector current vs. collector-Emitter voltage
Tj=25ºC [Terminal] (typ.)
100
80 Vcc=15V
Vcc=17V
Vcc=13V
60
40
20
0
0 0.5 1 1.5 2 2.5
Collector-Emitter voltage : VCE [V]
Collector current vs. collector-Emitter voltage
Tj=125ºC [Terminal] (typ.)
100
80 Vcc=15V
Vcc=17V
60
Vcc=13V
40
20
0
0
100
0.5 1 1.5 2
Collector-Emitter voltage : VCE [V]
Forward current vs. Forward voltage
[Terminal] (typ.)
2.5
80
Tj=125ºC
Tj=25ºC
60
40
20
0
0 0.5 1 1.5 2 2.5
Forward voltage : VF [V]
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 6MBP50VBA060-50.PDF ] |
Número de pieza | Descripción | Fabricantes |
6MBP50VBA060-50 | Power Devices (IGBT) | ETC |
6MBP50VBA060-50 | IGBT Module | Fuji Electric |
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