DataSheet26.com

7MBP75VDA060-50 PDF даташит

Спецификация 7MBP75VDA060-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 7MBP75VDA060-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

11 Pages
scroll

No Preview Available !

7MBP75VDA060-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
7MBP75VDA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 75A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 200
DC IC
-
Collector Current
1ms
Icp
-
Duty=77.1% (*2) -IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Collector Current
DC
1ms
IC
Icp
-
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M4)
Mounting (M4)
-
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
600
400
75
150
75
250
50
100
50
201
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1









No Preview Available !

7MBP75VDA060-50 Даташит, Описание, Даташиты
7MBP75VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items
Collector Current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector Current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Switching time
Symbol
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
ton
toff
trr
Conditions
VCE=600V
IC=75A
IF=75A
VCE=600V
IC=50A
IC=50A
Terminal
Chip
Terminal
Chip
Terminal
Chip
Terminal
Chip
VDC=300V, Tj=125ºC, IC=75A
VDC=300V, IC=75A
Supply current of P-side pre-driver (per one unit)
Iccp
Supply current of N-side pre-driver
Iccn
Input signal threshold voltage
Vinth(on)
Vinth(off)
Over Current Protection
Level
Inverter
Brake
IOC
Over Current Protection Delay time
tdOC
Short Circuit Protection Delay time
tSC
IGBT Chips Over Heating Protection Temperature Level TjOH
Over Heating Protection Hysteresis
TjH
Under Voltage Protection Level
VUV
Under Voltage Protection Hysteresis
VH
tALM(OC)
Alarm Signal Hold Time
tALM(UV)
tALM(TjOH)
Resistance for current limit
RALM
Switching Frequency= 0-15kHz
TC=-20~110ºC
Vin-GND
ON
OFF
Tj=125ºC
Tj=125ºC
Tj=125ºC
Surface of IGBT Chips
ALM-GND
TC=-20~110ºC
VCC
10V
Min.
-
-
-
-
-
-
-
-
-
-
1.1
-
-
-
-
1.2
1.5
113
75
-
-
150
-
11.0
0.2
1.0
2.5
5.0
960
Typ.
-
-
1.40
-
1.80
-
-
1.40
-
2.15
-
-
-
-
-
1.4
1.7
-
-
5
2
-
20
-
0.5
2.0
4.0
8.0
1265
Max.
1.0
2.10
-
2.40
-
1.0
1.85
-
2.60
-
-
2.1
0.3
13
54
1.6
1.9
-
-
-
3
-
-
12.5
-
2.4
4.9
11.0
1570
Units
mA
V
V
V
V
mA
V
V
V
V
µs
µs
µs
mA
mA
V
V
A
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Thermal Characteristics (TC = 25ºC)
Items
Junction to Case Thermal Resistance (*10)
Inverter
Brake
IGBT
FWD
IGBT
FWD
Case to Fin Thermal Resistance with Compound
Note *10: For 1device, the measurement point of the case is just under the chip.
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
Min.
-
-
-
-
-
Min.
±2.0
Typ.
-
-
-
-
0.05
Typ.
-
Max.
0.50
0.90
0.62
1.38
-
Max.
-
Units
°C/W
°C/W
°C/W
°C/W
°C/W
Units
kV
Recommended Operating Conditions
Items
DC Bus Voltage
Power Supply Voltage of Pre-Driver
Symbol
VDC
VCC
Switching frequency of IPM
fSW
Arm shoot through blocking time for IPM's input signal tdead
Screw Torque (M4)
-
Min.
Typ.
Max.
Units
- - 400 V
13.5 15.0 16.5
V
- - 20 kHz
1.0 -
- µs
1.3 - 1.7 Nm
2









No Preview Available !

7MBP75VDA060-50 Даташит, Описание, Даташиты
7MBP75VDA060-50
Block Diagram
VccU
VinU
ALMU
GNDU
VccV
VinV
ALM V
GNDV
VccW
VinW
ALM W
GNDW
Vcc
VinX
RALM
RALM
RALM
GND
VinY
VinZ
VinDB
ALM
RALM
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
P
U
V
W
Pre-Driver
Pre-Driver
Pre-Driver
B
N
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3










Скачать PDF:

[ 7MBP75VDA060-50.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
7MBP75VDA060-50Power Devices (IGBT)ETC
ETC
7MBP75VDA060-50IGBT ModuleFuji Electric
Fuji Electric

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск