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6MBP50VBA120-50 PDF даташит

Спецификация 6MBP50VBA120-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 6MBP50VBA120-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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6MBP50VBA120-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
6MBP50VBA120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 50A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• Compatible with existing IPM-N series packages
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 200
DC Ic
-
Collector Current
1ms
Ic pulse
-
Duty=100% (*2) -Ic
-
Collector Power Dissipation
1 device (*3)
Pc
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Mounting (M4) -
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1minute.
Max.
1200
800
50
100
50
255
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1









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6MBP50VBA120-50 Даташит, Описание, Даташиты
6MBP50VBA120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (Tj=25ºC, VCC=15V unless otherwise specified)
Items
Collector Current at off signal input
Collector-Emitter saturation voltage
Symbol
ICES
VCE(sat)
Forward voltage of FWD
VF
Switching time
ton
toff
trr
Supply current of P-side pre-driver (per one unit)
Iccp
Supply current of N-side pre-driver
Iccn
Input signal threshold voltage
Vinth(on)
Vinth(off)
Over Current Protection Level
IOC
Over Current Protection Delay time
tdOC
Short Circuit Protection Delay time
tSC
IGBT Chips Over Heating Protection Temperature Level TjOH
Over Heating Protection Hysteresis
TjH
Under Voltage Protection Level
VUV
Under Voltage Protection Hysteresis
VH
tALM(OC)
Alarm Signal Hold Time
tALM(UV)
tALM(TjOH)
Resistance for current limit
RALM
Conditions
VCE=1200V
IC=50A
Terminal
Chip
IF=50A
Terminal
Chip
VDC=600V, Tj=125ºC
Ic=50A
VDC=600V
IF=50A
Switching Frequency= 0-15kHz
Tc=-20~110ºC
Vin-GND
ON
OFF
Tj=125ºC
Tj=125ºC
Tj=125ºC
Surface of IGBT Chips
ALM-GND
Tc=-20~110ºC
VCC
10V
Min.
-
-
-
-
-
1.1
-
-
-
-
1.2
1.5
75
-
-
150
-
11.0
0.2
1.0
2.5
5.0
960
Typ.
-
-
1.70
-
2.10
-
-
-
-
-
1.4
1.7
-
5
2
-
20
-
0.5
2.0
4.0
8.0
1265
Max.
1.0
2.30
-
2.60
-
-
2.1
0.3
15
47
1.6
1.9
-
-
3
-
-
12.5
-
2.4
4.9
11.0
1570
Units
mA
V
V
V
V
µs
µs
µs
mA
mA
V
V
A
µs
µs
ºC
ºC
V
V
ms
ms
ms
Ω
Thermal Characteristics (TC = 25ºC)
Items
Junction to Case Thermal Resistance (*10)
Inverter
IGBT
FWD
Case to Fin Thermal Resistance with Compound
Note *10: For 1device, the measurement point of the case is just under the chip.
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Common mode rectangular noise
Pulse width 1μs, polarity ±, 10 minute
Judge : no over-current, no miss operating
Min.
-
-
-
Min.
±2.0
Typ.
-
-
0.05
Typ.
-
Max.
0.49
0.75
-
Max.
-
Units
°C/W
°C/W
°C/W
Units
kV
Recommended Operating Conditions
Items
Symbol
DC Bus Voltage
VDC
Power Supply Voltage of Pre-Driver
VCC
Arm shoot through blocking time for IPM's input signal tdead
Screw Torque (M4)
-
Min.
Typ.
Max.
Units
- - 800 V
13.5 15.0 16.5
V
1.0 -
- µs
1.3 - 1.7 Nm
2









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6MBP50VBA120-50 Даташит, Описание, Даташиты
6MBP50VBA120-50
Block Diagram
Vc c U
VinU
ALMU
GNDU
Vc c V
VinV
ALM V
GNDV
Vc c W
VinW
ALM W
GNDW
Vc c
VinX
R ALM
R ALM
R ALM
GND
VinY
VinZ
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
P
U
V
W
ALM
R ALM
N
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3










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