DataSheet26.com

даташит 2MBI150HH-120-50 PDF ( Datasheet )

2MBI150HH-120-50 Datasheet Download - Fuji Electric

Номер произв 2MBI150HH-120-50
Описание High Speed IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

1Page
		

No Preview Available !

2MBI150HH-120-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
2MBI150HH-120-50
IGBT Modules
HIGH SPEED IGBT MODULE
1200V / 150A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Soft-switching Application
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector Power Dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-off time
Forward on voltage
Lead resistance, terminal-chip (*4)
Note *4: Biggest internal terminal resistance among arm.
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
toff
tf
VF
(terminal)
VF
(chip)
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 150mA
Tj=25°C
VGE = 15V
Tj=125°C
IC = 150A
Tj=25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V, IC = 150A
VGE = ±15V, RG = 2.1Ω
Ls = 20nH
Tj=25°C
VGE = 0V
Tj=125°C
IF = 50A
Tj=25°C
Tj=125°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact Thermal resistance (1 device) (*5)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Maximum ratings
1200
±20
200
150
400
300
50
100
1390
+150
-40 ~ +125
2500
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 2.0
- - 400
5.7 6.2 6.7
- 3.40 3.70
- 4.20 -
- 3.20 3.50
- 4.00 -
- 12 -
- 0.30 0.60
0.05 0.20
- 1.85 2.30
- 2.00 -
- 1.70 2.15
- 1.85 -
- 1.20 -
Units
mA
nA
V
V
nF
µs
V
Characteristics
min. typ. max.
- - 0.09
- - 0.65
- 0.025 -
Units
°C/W
1







No Preview Available !

2MBI150HH-120-50 Даташит, Описание, Даташиты
2MBI150HH-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
400
300
12V 15V
VGE=20V
10V
200
100 8V
0
012345678
Collector-Emitter voltage : VCE [ V ]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
400
300
15V 12V
VGE=20V
10V
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
400
300 Tj=25oC Tj=125oC
200
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25ºC
100.0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4 Ic=400A
Ic=200A
Ic=100
2
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj=25oC
Cies
10.0
VGE
1.0
0.1
0
Coes
Cres
10 20
Collector-Emitter voltage : VCE [ V ]
30
2
0
0
VCE
100 200 300
Gate charge : Qg [ nC ]
400







No Preview Available !

2MBI150HH-120-50 Даташит, Описание, Даташиты
2MBI150HH-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.1Ω,Tj=25ºC
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.1Ω,Tj=125ºC
100
10
0
toff
tf
100 200
Collector current : Ic [ A ]
300
toff
100
tf
10
0
100 200
Collector current : Ic [ A ]
300
1000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V,Tj=25ºC
toff
100
10
1
tf
10
Gate resistance : RG [ Ω ]
100
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V,Tj=125ºC
20
Eoff
10
0
1 10 100
Gate resistance : RG [ Ω ]
3
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.1Ω
15
10 Eoff(125oC)
Eoff(25oC)
5
0
0 50 100 150 200 250 300
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 2.1Ω,Tj <= 125ºC
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]










Всего страниц 6 Pages
Скачать PDF[ 2MBI150HH-120-50.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
2MBI150HH-120-50Power Devices (IGBT)ETC
ETC
2MBI150HH-120-50High Speed IGBT ModuleFuji Electric
Fuji Electric

Номер в каталоге Описание Производители
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy

DataSheet26.com    |    2018    |   Контакты    |    Поиск