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даташит 4MBI300VG-120R-50 PDF ( Datasheet )

4MBI300VG-120R-50 Datasheet Download - Fuji Electric

Номер произв 4MBI300VG-120R-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 
предварительный просмотр
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4MBI300VG-120R-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
4MBI300VG-120R-50
IGBT Modules
IGBT MODULE (V series)
1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
Features
Higher Efficiency
Optimized A (T-type) -3 level circuit
Low inductance module structure
Featuring Reverse Blocking IGBT (RB-IGBT)
Applications
Inverter for Motor Drive
Uninterruptible Power Supply
Power conditioner
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IGBT
FWD
IC
Icp
-IC
-IC pulse
Continuous
1ms
1ms
Collector power dissipation
PC 1 device
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC Continuous
Icp 1ms
Collector power dissipation
PC 1 device
Junction temperature
Tj
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Screw torque
Mounting (*2)
Terminals (*3)
- M5 or M6
- M5
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable value : 2.5-3.5 Nm (M5 or M6)
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
TC=80°C
TC=80°C
TC=80°C
TC=80°C
Maximum ratings
1200
±20
300
600
300
600
1250
600
±20
300
600
1250
150
125
-40 ~ +125
2500
3.5
3.5
Units
V
V
A
W
V
V
A
W
°C
VAC
Nm
1

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4MBI300VG-120R-50 Даташит, Описание, Даташиты
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE = ±20V
VGE (th)
VCE = 20V, IC = 300mA
VCE (sat)
(chip)
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VCE (sat)
(terminal)
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
Cies VCE = 10V, VGE =0V, f = 1MHz
ton
tr
SW mode : A
VCC = 800V
tr (i) IC = 300A
toff
VGE = ±15V
RG = +10/-1Ω
tf
VF (chip) IF = 300A
Tj= 25°C
Tj=125°C
VF (terminal) IF = 300A
Tj= 25°C
Tj=125°C
Characteristics
min. typ. max.
- - 2.0
- - 400
6.0 6.5 7.0
- 1.85 2.10
- 2.20 -
- 2.05 2.35
- 2.40 -
- 25.2 -
- 1.10 1.90
- 0.70 1.25
- 0.14 -
- 0.62 1.10
- 0.09 0.35
- 1.70 1.95
- 1.85 -
- 1.95 2.25
- 2.10 -
Reverse recovery time
SW mode : A
trr VCC = 800V IF = 300A
VGE = ±15V RG = +10/-1Ω
- - 0.35
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE (th)
VCE (sat)
(chip)
VCE (sat)
(terminal)
Cies
ton
tr
tr (i)
toff
tf
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 300mA
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VGE = 15V
IC = 300A
Tj= 25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
SW mode : B
VCC = 400V
IC = 300A
VGE = ±15V
RG = +8.2/-39Ω
- - 3.0
- - 600
5.5 6.5 7.5
- 2.45 2.80
- 2.60 -
- 2.55 2.95
- 2.70 -
- 19.5 -
- 0.45 1.05
- 0.27 0.53
- 0.12 -
- 1.32 3.00
- 0.11 0.35
Reverse recovery time
SW mode : C
trr VCC = 400V IC = 300A
VGE = ±15V RG = +10/-1Ω
- - 0.30
Internal inductance
P-N
L P-M
M-N
- 40 -
- 33 -
- 33 -
Thermal resistance characteristics
Items
Symbols
Conditions
T1, T2 IGBT
Characteristics
min. typ. max.
- - 0.10
Thermal resistance (1device)
Rth(j-c)
T1, T2 FWD
T3, T4 RB-IGBT
- - 0.16
- - 0.10
Contact thermal resistance (1device) (*4)
Rth(c-f)
T1, T2
T3, T4
with Thermal Compound
- 0.025 -
- 0.017 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound (thermal conductivity = 1W/m ·k).
Units
mA
nA
V
V
nF
µs
V
µs
mA
nA
V
V
nF
µs
µs
nH
Units
°C/W
2

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4MBI300VG-120R-50 Даташит, Описание, Даташиты
4MBI300VG-120R-50
Definitions of switching time
L
RG
VGE
VCE
IC
0V
VGE
VCC
VCE
0V IC
0A
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
90%
trr
90%
Irr
10%
10%
tr (i)
tr
ton
IC
VCE
toff
0V
90%
10%
tf
Definitions of switching mode
Vcc1
P
T1
Vcc2
T1 G
T3 E T3 G T1/T4 E
M
Vcc2
T3
T4
T4 G
C
T2 G
T2 E
T2
N
U
SW mode Load L
T1
T2
T3
A
U-N
SW
OFF
OFF
P-U OFF SW OFF
B
P-U
OFF
OFF
SW
U-N
OFF
OFF
ON
C
M-U
SW
OFF
OFF
M-U OFF SW
ON
SW: Connect to drive circuit and input gate signal
ON: Bias voltage of gate + 15V
OFF: Reverse bias voltage of gate -1 5V
Vcc2=Vcc1/2
T4
OFF
OFF
ON
SW
ON
OFF
3






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