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PDF 6MBI450U4-120 Data sheet ( Hoja de datos )
| Número de pieza | 6MBI450U4-120 | |
| Descripción | IGBT Module | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 6MBI450U4-120
Spec. No. :
MS5F 6020
Jan. 20 ’05 S.Miyashita
Jan. 20 ’05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6020
1
14
a
H04-004-07b
1 page  
5. Thermal resistance characteristics
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT
FWD
- - 0.06
- - 0.10
Contact Thermal resistance
(1 device) (*6)
Rth(c-f)
with Thermal Compound
- 0.0167 -
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
oC/W
6.Recommend way of module mounting to Heat sink Clamping
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)→(5)→(6)→(7)→(8)
(2) Final ：Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)→(8)→(7)→(6)→(5)
(7) (3) (1) (5)
(6) (2) (4) (8)
Mounting holes
Heat sink
Module
7. Indication on module
Logo of production
Lot.No.
6M BI 450U4-120
450A 1200V
Place of manufacturing (code)
8. Applicable category
This specification is applied to IGBT-Module named 6MBI450U4-120.
9. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
• Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
MS5F6020
5
14
a
H04-004-03a
5 Page 
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=25oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=125oC
10000
1000
100
toff
ton tr
tf
10
0
200 400 600
Collector current : Ic [ A ]
800
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, VGE=±15V, Tj=25oC
10000
1000
ton
toff
tr
100
10
0.1
tf
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=450A, VGE=±15V, Tj=125oC
100
80
Eoff
60
Eon
40
20 Err
0
0.1
1.0 10.0
Gate resistance : RG [ Ω ]
100.0
1000
100
ton
toff
tr
tf
10
0
200 400 600
Collector current : Ic [ A ]
800
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω
100
80 Eoff(125oC)
60
Eoff(25oC)
40 Err(125oC)
Eon(125oC)
20
Err(25oC)
Eon(25oC)
0
0 150 300 450 600 750 900
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.1Ω, Tj <= 125oC
Stray inductance <= 100nH
1050
900
750
600
450
300
150
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6020
11
14
a
H04-004-03a
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet 6MBI450U4-120.PDF ] | |
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