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даташит 6MBI100U2B-060 PDF ( Datasheet )

6MBI100U2B-060 схема включения Datasheet Download - Fuji Electric

Номер произв 6MBI100U2B-060
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 
предварительный просмотр
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6MBI100U2B-060 Даташит, Описание, Даташиты
6MBI100U2B-060
IGBT MODULE (U series)
600V / 100A
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
I
Item
Symbol Condition
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
VCES
VGES
IC
Continuous
ICP 1ms
-IC
Collector power disspation
-IC pulse
PC
1 device
Operating junction temperature
Tj
Storage temperature
Tstg
Isolation between terminal and copper base *2 Viso
AC : 1 minute
voltage between thermistor and others *3
Mounting screw torque
Rating
600
±20
100
200
100
200
380
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
Unit
V
V
A
W
°C
°C
V
V
N·m

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6MBI100U2B-060 Даташит, Описание, Даташиты
IGBT Module
6MBI100U2B-060
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip *
Resistance
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B value
B
* Biggest internal terminal resistance among arm.
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
VGE=15V
Tj=25°C
Ic=100A
Tj=125°C
Tj=25°C
Tj=125°C
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=100A
VGE=±15V
RG= 33
VGE= 0 V
IF=100A
IF=100A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
T=100°C
T=25/50°C
Characteristics
Min.
Typ.
Max.
- - 1.0
- - 200
6.2 6.7 7.7
- 2.20 2.50
- 2.35 -
- 1.85 -
- 2.00 -
- 8.4 -
- 0.40 1.20
- 0.22 0.60
- 0.16 -
- 0.48 1.20
- 0.07 0.45
- 1.95 2.30
- 2.00 -
- 1.60 -
- 1.65 -
- - 0.35
- 3.4 -
-
465
3305
5000
495
3375
-
520
3450
Unit
mA
nA
V
V
nF
µs
V
µs
m
K
Thermal resistance Characteristics
Item
Symbol
Condition
Min.
Thermal resistance ( 1 device )
Rth(j-c)
IGBT
-
FWD
-
Contact thermal resistance *
Rth(c-f)
With thermal compound
-
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Characteristics
Typ.
Max.
- 0.33
- 0.66
0.05 -
Unit
°C/W
Equivalent Circuit Schematic
30,31 ,32
1
2
3
4
33,34 ,35
5
6
U
27,28 ,29
7
8
9
10
V
24,25 ,26
11
12
16,17 ,18
19
20
W
21,22 ,23
13,14 ,15

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6MBI100U2B-060 Даташит, Описание, Даташиты
IGBT Module
Characteristics (Representative)
6MBI100U2B-060
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
250
200
VGE=20V 15V
12V
10V
150
100
50
0
0
8V
1234
Collector-Emitter voltage : VCE [V]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
250
200 Tj=25°C Tj=125°C
150
100
50
0
0123
Collector-Emitter voltage : VCE [V]
4
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
250
200 VGE=20V 15V 12V
10V
150
100
50 8V
0
01234
Collector-Emitter voltage : VCE [V]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
2
Ic=200A
Ic=100A
Ic= 50A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
10.0 Cies
Cres
1.0
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [V]
30
Dynamic Gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
500 25
400 20
300 15
VGE
200 10
100
0
0
5
VCE
0
100 200 300 400 500
Gate charge : Qg [ nC ]






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