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6MBI50VA-060-50 PDF даташит

Спецификация 6MBI50VA-060-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 6MBI50VA-060-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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6MBI50VA-060-50 Даташит, Описание, Даташиты
http://www.fujielectric.com/products/semiconductor/
6MBI50VA-060-50
IGBT Modules
IGBT MODULE (V series)
600V / 50A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Conditions
Continuous
TC=80°C
Maximum
ratings
600
±20
50
Units
V
V
Collector current
IC pulse
-IC
1ms
TC=80°C
100
50
A
Collector power dissipation
-IC pulse
PC
1ms
1 device
100
200 W
Junction temperature
Tj
175
Operating junciton temperature
(under switching conditions)
Tjop
150 °C
Case temperature
TC
125
Storage temperature
Tstg
-40 ~ +125
Isolation voltage
Between terminal and copper base (*1)
Between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque Mounting (*3)
- M5
3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1









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6MBI50VA-060-50 Даташит, Описание, Даташиты
6MBI50VA-060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
RG (int)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 600V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 50mA
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
-
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V
IC = 50A
VGE = +15 / -15V
RG = 43Ω
IF = 50A
IF = 50A
IF = 50A
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 1.0
- - 200
6.2 6.7 7.2
- 1.90 2.35
- 2.20 -
- 2.40 -
- 1.60 2.05
- 1.90 -
- 2.10 -
0-
- 3.3 -
- 0.36 1.20
- 0.25 0.60
- 0.07 -
- 0.52 1.20
- 0.03 0.45
- 1.90 2.35
- 1.80 -
- 1.75 -
- 1.60 2.05
- 1.50 -
- 1.45 -
- - 0.35
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 0.71
- - 1.15
- 0.05 -
Units
°C/W
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
25,2 6
1
2
27,2 8
3
4
U
23,2 4
5
6
7
8
9
10
V
21,2 2
11
12
15,1 6
17 18
W
19,2 0
13,1 4
2









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6MBI50VA-060-50 Даташит, Описание, Даташиты
6MBI50VA-060-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
100
VGE =20V
12V
15V
75
10V
50
25
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
100
Tj=25°C
150°C
125°C
75
50
25
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
100.0
10.0
Cies
1.0
0.1
0
Coes
Cres
10 20 30 40
Collector - Emitter voltage: VCE [V]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
100
VGE=20V
15V
12V
75
10V
50
25
8V
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
8
6
4
2 IC=100A
IC=50A
IC=25A
0
5 10 15 20
Gate - Emitter voltage: VGE [V]
25
[ Inverter ]
Dynamic gate charge (typ.)
VCC=300V, IC=50A,Tj= 25°C
VCE
0
VGE
-400 0 400
Gate charge: QG [nC]










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Номер в каталогеОписаниеПроизводители
6MBI50VA-060-50Power Devices (IGBT)ETC
ETC
6MBI50VA-060-50IGBT ModuleFuji Electric
Fuji Electric

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