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6MBI100VA-060-50 Datasheet Download - Fuji Electric

Номер произв 6MBI100VA-060-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 
предварительный просмотр
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6MBI100VA-060-50 Даташит, Описание, Даташиты
6MBI100VA-060-50
IGBT MODULE (V series)
600V / 100A / 6 in one package
IGBT Modules
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Conditions
Continuous
Tc=80°C
Maximum
ratings
600
±20
100
Units
V
V
Collector current
Icp 1ms Tc=80°C
-Ic
200
100
A
-Ic pulse
1ms
200
Collector power dissipation
Pc 1 device
335 W
Junction temperature
Tj
175
Operating junciton temperature
(under switching conditions)
Tjop
150 °C
Case temperature
Tc
125
Storage temperature
Tstg
-40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque Mounting (*3)
- M5
3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1

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6MBI100VA-060-50 Даташит, Описание, Даташиты
6MBI100VA-060-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 600V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 100mA
VGE = 15V
IC = 100A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 100A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 300V
IC = 100A
VGE = +15 / -15V
RG = 13Ω
IF = 100A
IF = 100A
IF = ±20
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*4)
Rth(c-f) with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 200
6.2 6.7 7.2
- 2.05 2.50
- 2.35 -
- 2.55 -
- 1.60 2.05
- 1.90 -
- 2.10 -
- 6.4 -
- 0.39 1.20
- 0.09 0.60
- 0.03 -
- 0.53 1.00
- 0.06 0.30
- 2.05 2.50
- 1.95 -
- 1.95 -
- 1.60 2.05
- 1.50 -
- 1.47 -
- - 0.35
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Characteristics
min. typ. max.
- - 0.45
- - 0.80
- 0.05 -
Units
°C/W
Equivalent Circuit Schematic
25,2 6
1
2
27,2 8
3
4
[ Inverter ]
U
23,2 4
5
6
7
8
V
21,22
9
10
11
12
[ Thermistor ]
15,1 6
17 18
W
19,20
13,1 4
2

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6MBI100VA-060-50 Даташит, Описание, Даташиты
6MBI100VA-060-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
200
VGE=20V
12V
150 15V
10V
100
50
0
0
8V
1234
Collector-Emitter voltage: VCE [V]
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE =15V / chip
200
Tj=25°C
150°C
150 125°C
100
50
0
012345
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
100.0
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
200
VGE=20V
15V
12V
150
10V
100
50
8V
0
012345
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
2 Ic=200A
Ic=100A
Ic= 50A
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=100A, Tj= 25°C
10.0 Cies
1.0 Coes
Cres
0.1
0
10 20 30 40
Collector - Emitter voltage: VCE [V]
3
VGE
VCE
0 200 400 600
Gate charge: Qg [nC]
800






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