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6MBI50VW-120-50 PDF даташит

Спецификация 6MBI50VW-120-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 6MBI50VW-120-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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6MBI50VW-120-50 Даташит, Описание, Даташиты
6MBI50VW-120-50
IGBT MODULE (V series)
1200V / 50A / 6 in one package
IGBT Modules
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Maximum
ratings
1200
Units
V
Gate-Emitter voltage
VGES
±20 V
Ic
Continuous
Tc=80°C
50
Collector current
Icp 1ms Tc=80°C
-Ic
100
50
A
-Ic pulse
1ms
100
Collector power dissipation
Pc 1 device
280 W
Maximum junction temperature
Tjmax
175
Temperature under switching conditions
Tjop
150 °C
Storage temperature
Tstg
-40~+125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque Mounting (*3)
- M5
3.5 N m
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
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6MBI50VW-120-50 Даташит, Описание, Даташиты
6MBI50VW-120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 50mA
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 50A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 50A
VGE = +15 / -15V
RG = 15Ω
IF = 50A
IF = 50A
IF = ±20
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*4)
Rth(c-f) with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 200
6.0 6.5 7.0
- 2.15 2.60
- 2.50 -
- 2.55 -
- 1.85 2.30
- 2.20 -
- 2.25 -
- 4.2 -
- 0.39 1.20
- 0.09 0.60
- 0.03 -
- 0.53 1.00
- 0.06 0.30
- 2.00 2.45
- 2.15 -
- 2.10 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- - 0.1
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Characteristics
min. typ. max.
- - 0.54
- - 0.73
- 0.05 -
Units
°C/W
Equivalent Circuit Schematic
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6MBI50VW-120-50 Даташит, Описание, Даташиты
6MBI50VW-120-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
50
VGE=20V
15V
12V
40
30
10V
20
10
0
0
8V
1234
Collector-Emitter voltage: VCE[V]
5
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
50
Tj=25°C 125°C 150°C
40
30
20
10
0
012345
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
10.0
Cies
1.0
Cres
0.1
Coes
0.0
0
10 20 30
Collector - Emitter voltage: VCE [V]
40
3
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
50
VGE=20V
15V
40 12V
30
20 10V
10
0
0
8V
1234
Collector-Emitter voltage: VCE[V]
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
8
6
4
Ic=50A
2 Ic=25A
Ic= 13A
0
5 10 15 20 25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600VIc=50ATj= 25°C
VGE
VCE
0 50 100 150 200 250 300
Gate charge: Qg [nC]










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Номер в каталогеОписаниеПроизводители
6MBI50VW-120-50Power Devices (IGBT)ETC
ETC
6MBI50VW-120-50IGBT ModuleFuji Electric
Fuji Electric

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