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6MBI450V-120-50 PDF даташит

Спецификация 6MBI450V-120-50 изготовлена ​​​​«Fuji Electric» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв 6MBI450V-120-50
Описание IGBT Module
Производители Fuji Electric
логотип Fuji Electric логотип 

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6MBI450V-120-50 Даташит, Описание, Даташиты
6MBI450V-120-50
IGBT MODULE (V series)
1200V / 450A / 6 in one package
http://www.fujisemi.com
IGBT Modules
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbols
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Conditions
Continuous
1ms
1ms
Tc=80°C
Tc=80°C
Maximum
ratings
1200
±20
450
900
450
900
Units
V
V
A
Collector power dissipation
Junction temperature
Pc 1 device
Tj
2250
175
W
Operation temperature
Storage temperature
Top
Tstg
150
-40 to +125
°C
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
AC : 1min.
2500
VAC
Screw torque
Mounting (*3)
Terminals (*4)
-
-
3.5
4.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Note *4: Recommendable value : 3.5-4.5 Nm (M6)
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6MBI450V-120-50 Даташит, Описание, Даташиты
6MBI450V-120-50
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols Conditions
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R
B
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 450mA
VGE = 15V
IC = 450A
Tj=25°C
Tj=125°C
Tj=150°C
VGE = 15V
IC = 450A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V
IC = 450A
VGE = +15V
RG = 0.52Ω
VGE = 0V
IF = 450A
VGE = 0V
IF = 450A
IF = 450A
T = 25°C
T = 100°C
T = 25 / 50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)(*5)
Rth(j-c)
Inverter IGBT
Inverter FWD
Contact thermal resistance (1device) (*6)
Rth(c-f) with Thermal Compound
Note *5: This value is including margins. This will be revised in future.
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
IGBT Modules
http://www.fujisemi.com
Characteristics
min. typ. max.
- - 3.0
- - 600
6.0 6.5 7.0
- 2.30 2.75
- 2.60 -
- 2.65 -
- 1.75 2.20
- 2.05 -
- 2.10 -
- 41 -
- 550 1200
- 180 600
- 120 -
- 1050 2000
- 110 350
- 2.25 2.70
- 2.40 -
- 2.35 -
- 1.70 2.15
- 1.85 -
- 1.80 -
- 200 600
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Characteristics
min. typ. max.
- - 0.066
- - 0.100
- 0.0167 -
Units
°C/W
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
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6MBI450V-120-50 Даташит, Описание, Даташиты
6MBI450V-120-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
800
15V
12V
Vge=20V
600
10V
400
200
0
0
8V
1234
Collector-Emitter voltage: Vce [V]
5
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
1000
125°C
800
600 Tj=25°C
150°C
400
200
0
012345
Collector-Emitter Voltage: Vce [V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, ƒ= 1MHz, Tj= 25°C
1000
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1000
800
Vge= 20V
15V
12V
600
10V
400
200
0
0
8V
1234
Collector-Emitter voltage: Vce [V]
5
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
2
Ic=900A
Ic=450A
Ic=225A
0
5 10 15 20 25
Gate-Emitter Voltage: Vge [V]
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=450A, Tj= 25°C
100
Cies
10
Coes
Cres
1
0 10 20 30
Collector-Emitter voltage: Vce [V]
3
Vge Vce
0 1000 2000 3000 4000 5000 6000
Gate charge: Qg [nC]










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Номер в каталогеОписаниеПроизводители
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