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NTY100N10 PDF даташит

Спецификация NTY100N10 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTY100N10
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTY100N10 Даташит, Описание, Даташиты
NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V N−Channel
Enhancement−Mode TO264
Package
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
PbFree Package is Available*
Applications
PWM Motor Control
Power Supplies
Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1 MW)
GateSource Voltage
Continuous
NonRepetitive (tp v 10 ms)
Drain Current (Note 1)
Continuous @ TC = 25°C
Pulsed
Total Power Dissipation (Note 1)
Derate above 25°C
VDSS
VDGR
100
100
V
V
VGS
VGSM
ID
IDM
PD
$ 20
$ 40
123
369
313
2.5
V
V
A
A
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg 55 to
150
°C
Single Pulse DraintoSource
Avalanche Energy Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
Peak IL = 100 Apk, L = 0.1 mH, RG = 25 W)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 0.125 in from case for 10 seconds
EAS
RRqqJJCA
TL
500 mJ
0.4 °C/W
25
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, DutyCycle = 2%.
http://onsemi.com
123 A, 100 V
9 mW @ VGS = 10 V (Typ)
NChannel
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
12 3
TO264
CASE 340G
STYLE 1
NTY100N10
AYYWWG
123
GDS
A = Assembly Location
YY = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NTY100N10
NTY100N10G
Package
TO264
TO264
(PbFree)
Shipping
25 Units/Rail
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 2
1
Publication Order Number:
NTY100N10/D









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NTY100N10 Даташит, Описание, Даташиты
NTY100N10
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 250 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 150°C)
GateBody Leakage Current
(VGS = $20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
(Negative Temperature Coefficient)
Static DrainSource OnState Resistance
(VGS = 10 Vdc, ID = 50 Adc)
(VGS = 10 Vdc, ID = 50 Adc, 150°C)
DrainSource OnVoltage (VGS = 10 Vdc, ID = 100 Adc)
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz)
SWITCHING CHARACTERISTICS (Notes 2, 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Total Gate Charge
GateSource Charge
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
BODYDRAIN DIODE RATINGS (Note 2)
Forward OnVoltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 100 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Indicates Pulse Test: Pulse Width v300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
100
144
Vdc
mV/°C
mAdc
− − 10
− − 100
−−
nAdc
100
2.0 3.1 4.0 Vdc
10.6 mV/°C
W
0.009 0.010
0.019 0.021
0.8 1.0 Vdc
73 Mhos
7225 10110
pF
1800
2540
270 540
30 55 ns
150 265
340 595
250 435
200 350 nC
40
100
86
Vdc
1.02 1.1
0.94
210
ns
155
55
1.08
mC
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NTY100N10 Даташит, Описание, Даташиты
NTY100N10
200 200
VGS = 9.0 V
VGS = 10 V
TJ = 25°C
VDS w 10 V
150
VGS = 8.0 V
VGS = 7.0 V
VGS = 6.0 V
150
VGS = 6.5 V
100
VGS = 5.6 V
100
50
VGS = 5.0 V
50
TJ = 100°C
TJ = 25°C
VGS = 4.6 V
TJ = 55°C
00
0 2 4 6 8 10 0 2 4 6 8 10
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. OnRegion Characteristics
0.018
0.016
0.014
VGS = 10 V
T = 100°C
0.012
0.01
0.008
T = 25°C
0.006
0.004
T = 55°C
0.002
0
0 50 100 150 200
ID, DRAIN CURRENT (A)
Figure 3. OnResistance versus Drain
Current and Temperature
0.0095
T = 25°C
0.009
0.0085
VGS = 10 V
VGS = 15 V
0.008
0.0075
0
50 100 150
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain
Current and Gate Voltage
20
2.5
ID = 50 A
VGS = 10 V
2.0
1.5
1.0
0.5
1000000
100000
VGS = 0 V
10000
1000
100
TJ = 125°C
TJ = 100°C
10
0
50 25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
1.0
0
20 40 60 80 100
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage
Current versus Voltage
http://onsemi.com
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NTY100N10Power MOSFET ( Transistor )ON Semiconductor
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