NTY100N10 PDF даташит
Спецификация NTY100N10 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTY100N10 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
8 Pages
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NTY100N10
Preferred Device
Power MOSFET 123 A,
100 V N−Channel
Enhancement−Mode TO264
Package
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available*
Applications
• PWM Motor Control
• Power Supplies
• Converters
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp v 10 ms)
Drain Current (Note 1)
− Continuous @ TC = 25°C
− Pulsed
Total Power Dissipation (Note 1)
Derate above 25°C
VDSS
VDGR
100
100
V
V
VGS
VGSM
ID
IDM
PD
$ 20
$ 40
123
369
313
2.5
V
V
A
A
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to
150
°C
Single Pulse Drain−to−Source
Avalanche Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc,
Peak IL = 100 Apk, L = 0.1 mH, RG = 25 W)
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 0.125 in from case for 10 seconds
EAS
RRqqJJCA
TL
500 mJ
0.4 °C/W
25
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty−Cycle = 2%.
http://onsemi.com
123 A, 100 V
9 mW @ VGS = 10 V (Typ)
N−Channel
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
12 3
TO−264
CASE 340G
STYLE 1
NTY100N10
AYYWWG
123
GDS
A = Assembly Location
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NTY100N10
NTY100N10G
Package
TO−264
TO−264
(Pb−Free)
Shipping
25 Units/Rail
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
NTY100N10/D
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NTY100N10
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 150°C)
Gate−Body Leakage Current
(VGS = $20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
(Negative Temperature Coefficient)
Static Drain−Source On−State Resistance
(VGS = 10 Vdc, ID = 50 Adc)
(VGS = 10 Vdc, ID = 50 Adc, 150°C)
Drain−Source On−Voltage (VGS = 10 Vdc, ID = 100 Adc)
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz)
SWITCHING CHARACTERISTICS (Notes 2, 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc, RG = 9.1 W)
Fall Time
Total Gate Charge
Gate−Source Charge
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
BODY−DRAIN DIODE RATINGS (Note 2)
Forward On−Voltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 100 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
2. Indicates Pulse Test: Pulse Width v300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
100 −
− 144
− Vdc
− mV/°C
mAdc
− − 10
− − 100
−−
nAdc
100
2.0 3.1 4.0 Vdc
− 10.6 − mV/°C
W
− 0.009 0.010
− 0.019 0.021
− 0.8 1.0 Vdc
− 73 − Mhos
−
7225 10110
pF
−
1800
2540
− 270 540
− 30 55 ns
− 150 265
− 340 595
− 250 435
− 200 350 nC
− 40 −
− 100 −
− 86 −
Vdc
− 1.02 1.1
− 0.94 −
− 210 −
ns
− 155 −
− 55 −
− 1.08 −
mC
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2
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NTY100N10
200 200
VGS = 9.0 V
VGS = 10 V
TJ = 25°C
VDS w 10 V
150
VGS = 8.0 V
VGS = 7.0 V
VGS = 6.0 V
150
VGS = 6.5 V
100
VGS = 5.6 V
100
50
VGS = 5.0 V
50
TJ = 100°C
TJ = 25°C
VGS = 4.6 V
TJ = −55°C
00
0 2 4 6 8 10 0 2 4 6 8 10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. On−Region Characteristics
0.018
0.016
0.014
VGS = 10 V
T = 100°C
0.012
0.01
0.008
T = 25°C
0.006
0.004
T = −55°C
0.002
0
0 50 100 150 200
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain
Current and Temperature
0.0095
T = 25°C
0.009
0.0085
VGS = 10 V
VGS = 15 V
0.008
0.0075
0
50 100 150
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
20
2.5
ID = 50 A
VGS = 10 V
2.0
1.5
1.0
0.5
1000000
100000
VGS = 0 V
10000
1000
100
TJ = 125°C
TJ = 100°C
10
0
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0
0
20 40 60 80 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
http://onsemi.com
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NTY100N10 | Power MOSFET ( Transistor ) | ON Semiconductor |
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