|
|
PDF AON7900 Data sheet ( Hoja de datos )
| Número de pieza | AON7900 | |
| Descripción | 30V Dual Asymmetric N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AON7900 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
AON7900
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON7900 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN3.3x3.3 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON7900 is
well suited for use in compact DC/DC converter
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
24A
<21mΩ
<28mΩ
Q2
30V
40A
<6.7mΩ
<8.5mΩ
Top View
DFN3.3X3.3A
Bottom View
PIN1
PIN1
PIN1
Top View
Bottom View
8
G2
S2 7
6
S2
S2 5
D2/S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
24 40
15 31
Pulsed Drain Current C
IDM 90 150
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
8
6
22
24
13
10
28
39
TC=25°C
Power Dissipation B TC=100°C
PD
17
7
50
20
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.8
1.1
1.8
1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1
35
72
7.5
Max Q2
35
72
2.5
1
G1
2
D1
3 D1
4 D1
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Sep 2010
www.aosmd.com
Page 1 of 10
1 page  
AON7900
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 20
TA=25°C
TA=150°C
TA=100°C
TA=125°C
15
10
5
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
30 10000
25 TA=25°C
1000
20 17
15 100 5
2
10 10
10
5
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=72°C/W
40
0.1
0.01
0.001
0.00001
PD
0.0001
Single Pulse
0.001
0.01
0.1
Ton T
1 10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Sep 2010
www.aosmd.com
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON7900.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AON7900 | 30V Dual Asymmetric N-Channel MOSFET | Alpha & Omega Semiconductors |
| AON7902 | 30V Dual Asymmetric N-Channel MOSFET | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |