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PDF NCE4435 Data sheet ( Hoja de datos )
| Número de pieza | NCE4435 | |
| Descripción | NCE P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4435 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
GENERAL FEATURES
● VDS = -30V,ID = -9.1A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 20mΩ @ VGS=-10V
D
G
S
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery Switch
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4435
NCE4435
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-30
±20
-9.1
-50
3.1
-55 To 150
40
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30 -33
-
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
Pb Free Product
NCE4435
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE4435.PDF ] | |
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