NCE4007S PDF даташит
Спецификация NCE4007S изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE4007S |
Описание | NCE P-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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Pb Free Product
NCE4007S
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =-40V,ID =-6.2A
RDS(ON) <25mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● DC-DC Converter
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4007
NCE4007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Limit
-40
±20
-6.2
-4
40
2.5
-55 To 150
50
Unit
V
V
A
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE4007S
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40 -
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=-40V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.1 -1.7
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
- - 25 mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-5A
20 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=-20V,VGS=0V,
F=1.0MHz
- 3000
- 260
-
-
PF
PF
Crss
- 180
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 9.5
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-20V, ,RL=2Ω
VGS=-10V,RGEN=3Ω
- 20
- 55
- 30
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=-20V,ID=-5A,
VGS=-10V
- 43
- 7.5
-9
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-6A
- - 1.2
V
Diode Forward Current (Note 2)
IS
--
-6
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = -5A
- - 38 nS
Qrr di/dt = 100A/μs(Note3) - - 47 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE4007S
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
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Номер в каталоге | Описание | Производители |
NCE4007S | NCE P-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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