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NCE4007S PDF даташит

Спецификация NCE4007S изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE P-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE4007S
Описание NCE P-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE4007S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE4007S
NCE P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE4007S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
VDS =-40V,ID =-6.2A
RDS(ON) <25m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
DC-DC Converter
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
4007
NCE4007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Limit
-40
±20
-6.2
-4
40
2.5
-55 To 150
50
Unit
V
V
A
A
A
W
/W
Wuxi NCE Power Semiconductor Co., Ltd
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NCE4007S Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE4007S
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-40 -
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=-40V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.1 -1.7
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
- - 25 m
Forward Transconductance
gFS
VDS=-5V,ID=-5A
20 -
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=-20V,VGS=0V,
F=1.0MHz
- 3000
- 260
-
-
PF
PF
Crss
- 180
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 9.5
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-20V, ,RL=2
VGS=-10V,RGEN=3
- 20
- 55
- 30
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=-20V,ID=-5A,
VGS=-10V
- 43
- 7.5
-9
-
-
-
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-6A
- - 1.2
V
Diode Forward Current (Note 2)
IS
--
-6
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = -5A
- - 38 nS
Qrr di/dt = 100A/μs(Note3) - - 47 nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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NCE4007S Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE4007S
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталогеОписаниеПроизводители
NCE4007SNCE P-Channel Enhancement Mode Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor

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