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PDF NCE2312A Data sheet ( Hoja de datos )
| Número de pieza | NCE2312A | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE2312A
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2312A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● VDS = 20V,ID = 5A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
D
G
S
Schematic diagram
Marking and pin assignment
Application
●Battery protection
●Load switch
●Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2312A
NCE2312A
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±10
4.5
13.5
1.25
-55 To 150
100
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Min Typ Max Unit
20 22
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE2312A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE2312A.PDF ] | |
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