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PDF NCE2304 Data sheet ( Hoja de datos )
| Número de pieza | NCE2304 | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE2304
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2304 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
General Features
● VDS = 30V,ID = 3.6A
RDS(ON) < 73mΩ @ VGS=4.5V
RDS(ON) <58mΩ @ VGS=10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Battery protection
● Load switch
● Power management
D
G
S
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2304
NCE2304
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±20
3.6
15
1.7
-55 To 150
73.5
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Min Typ Max Unit
30 33
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE2304
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE2304.PDF ] | |
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