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PDF NCE8601B Data sheet ( Hoja de datos )

Número de pieza NCE8601B
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power Semiconductor 
Logotipo NCE Power Semiconductor Logotipo



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No Preview Available ! NCE8601B Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE8601B
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8601B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protested.
General Features
VDS = 30V,ID =8A
RDS(ON) < 26m@ VGS=4.5V
RDS(ON) < 21m@ VGS=10V
ESD Rating: 2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Marking and pin Assignment
Application
PWM application
Load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
8601B
NCE8601B
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±12
8
32
1.5
-55 To 150
83
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Min Typ Max Unit
30 34.5
--
37
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE8601B pdf
http://www.ncepower.com
Pb Free Product
NCE8601B
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v10

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