NCE75H21TB PDF даташит
Спецификация NCE75H21TB изготовлена «NCE Power» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE75H21TB |
Описание | NCE N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power |
логотип |
7 Pages
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Pb Free Product
NCE75H21TB
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21TB uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 75V,ID =210A
RDS(ON) < 4.0mΩ @ VGS=10V
(Typ3.3mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21TB
NCE75H21TB
TO-247
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
75
±20
210
148
850
330
Quantity
-
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE75H21TB
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
2.2
2200
-55 To 175
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.45 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
75 -
-
V
- - 1 μA
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=5V,ID=40A
23
- 3.3
60 -
4
4.0
-
V
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 9400
- 880
-
-
PF
PF
Crss
- 520
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RL=1Ω
VGS=10V,RGEN=2.5Ω
VDS=30V,ID=30A,
VGS=10V
- 26.3
- 48.8
- 87.5
- 30
- 228
- 66
- 36
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=20A
- - 1.2
V
IS
-
- - 110
A
trr
TJ = 25°C, IF = 40A
- 53
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 123
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuit
Pb Free Product
NCE75H21TB
2)Gate charge test Circuit
3)Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
NCE75H21T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE75H21TB | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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