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Número de pieza | NCE80H11D | |
Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NCE80H11D (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Pb Free Product
NCE80H11D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE80H11D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =80V,ID =105A
RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE80H11D
NCE80H11D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Limit
80
±20
105
80
420
200
1.33
800
Unit
V
V
A
A
A
W
W/℃
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page http://www.ncepower.com
Pb Free Product
NCE80H11D
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NCE80H11D.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCE80H11 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE80H11D | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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