DataSheet.es    


PDF NCE85H15T Data sheet ( Hoja de datos )

Número de pieza NCE85H15T
Descripción NCE N-Channel Enhancement Mode Power MOSFET
Fabricantes NCE Power 
Logotipo NCE Power Logotipo



Hay una vista previa y un enlace de descarga de NCE85H15T (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! NCE85H15T Hoja de datos, Descripción, Manual

http://www.ncepower.com
Pb Free Product
NCE85H15T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H15T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. This
device is suitable for use in PWM, load switching and general
purpose applications.
General Features
VDS =85V,ID =150A
RDS(ON) <4.8m@ VGS=10V (Typ:3.9m)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Special designed for Convertors and power controls
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H15T
NCE85H15T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
ID (100)
IDM
PD
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
85
±20
150
106
600
270
15
1.8
1100
Unit
V
V
A
A
A
W
V/ns
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0

1 page




NCE85H15T pdf
http://www.ncepower.com
Pb Free Product
NCE85H15T
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature()
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature()
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet NCE85H15T.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
NCE85H15NCE N-Channel Enhancement Mode Power MOSFETNCE Power
NCE Power
NCE85H15TNCE N-Channel Enhancement Mode Power MOSFETNCE Power
NCE Power

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar