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PDF NCE6005S Data sheet ( Hoja de datos )
| Número de pieza | NCE6005S | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power | |
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http://www.ncepower.com
Pb Free Product
NCE6005S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =4.5A
RDS(ON) < 45mΩ @ VGS=10V
（Typ：38mΩ）
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6005
NCE6005S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
60
±20
4.5
3.0
20
2
-55 To 150
62.5
Unit
V
V
A
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE6005S
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE6005S.PDF ] | |
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