NCE60H15 PDF даташит
Спецификация NCE60H15 изготовлена «NCE Power» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET». |
|
Детали детали
Номер произв | NCE60H15 |
Описание | NCE N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power |
логотип |
7 Pages
No Preview Available ! |
http://www.ncepower.com
Pb Free Product
NCE60H15
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H15 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =60V,ID =150A
RDS(ON) <4.5mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE60H15
NCE60H15
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
60
±20
150
105
600
220
Unit
V
V
A
A
A
W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
No Preview Available ! |
http://www.ncepower.com
Pb Free Product
NCE60H15
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1.47
1400
-55 To 175
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60 68
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
Forward Transconductance
RDS(ON)
gFS
VGS=10V, ID=75A
VDS=50V,ID=75A
- 3.6
180 -
4.5
-
mΩ
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 6500
- 650
-
-
PF
PF
Crss
- 590
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 26
-
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=30V,ID=2A,RL=15Ω - 24
VGS=10V,RG=2.5Ω
- 91
- 39
-
-
-
nS
nS
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=30V,ID=30A,
VGS=10V
- 163
- 31
- 64
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
-
1.2 V
Diode Forward Current (Note 2)
IS
- - 150
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 40A
- 42
60
nS
Qrr
di/dt = 100A/μs(Note3)
- 66
80
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0
No Preview Available ! |
http://www.ncepower.com
Test circuit
1)EAS test Circuits
Pb Free Product
NCE60H15
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
Скачать PDF:
[ NCE60H15.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NCE60H10 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE60H10F | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE60H12 | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE60H15 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |