|
|
Número de pieza | NCE7080 | |
Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NCE7080 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! http://www.ncepower.com
Pb Free Product
NCE7080
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE7080 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =70V,ID =80A
RDS(ON) < 8mΩ @ VGS=10V (Typ:6.3mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7080
NCE7080
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
70
±20
80
56
310
150
1
450
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page http://www.ncepower.com
Pb Free Product
NCE7080
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NCE7080.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCE7080 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |