NCE7559K PDF даташит
Спецификация NCE7559K изготовлена «NCE Power» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE7559K |
Описание | NCE N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power |
логотип |
7 Pages
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NCE7559K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7559k uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
7.2
8.5
59
V
mΩ
mΩ
A
Features
● VDS=75V;ID=59A@ VGS=10V;
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7559K
NCE7559K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
75
±20
59
41
230
130
0.87
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
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NCE7559K
Pb-Free Product
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
RthJC
RthJA
Value
1.15
63
Unit
℃/W
℃/W
Table 3. Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
75 84
-
V
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
IDSS
VDS=75V,VGS=0V
VDS=75V,VGS=0V
- - 1 μA
- - 10 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=30A
2 2.85
4
- 7.2 8.5
V
mΩ
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gFS
VDS=5V,ID=30A
- 60
-
S
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 3400
- 290
-
-
PF
PF
Crss
- 221
-
PF
Qg
Qgs
VDS=30V,ID=30A,
VGS=10V
- 94
- 16
-
-
nC
nC
Qgd
- 24
-
nC
Switching times
Turn-on Delay Time
td(on)
- 15
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
- 11
- 52
-
-
nS
nS
Turn-Off Fall Time
tf
- 13
-
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Forward on voltage(Note 1)
Reverse Recovery Time(Note 1)
Reverse Recovery Charge(Note 1)
ISD
- - 59
A
VSD
Tj=25℃,ISD=40A,VGS=0V
- - 1.2
V
trr
Qrr
- - 33 nS
Tj=25℃,IF=40A,di/dt=100A/μs
-
-
54
nC
Forward Turn-on Time
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes
1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1) EAS test circuit
2) Gate charge test circuit
3) Switch Time Test Circuit
NCE7559K
Pb-Free Product
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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NCE7559K | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
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