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PDF NCE7578 Data sheet ( Hoja de datos )
| Número de pieza | NCE7578 | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power | |
| Logotipo |  |
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http://www.ncepower.com
NCE7578
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7578 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
84
7.0
8.5
78
V
mΩ
mΩ
A
Features
● VDS=75V；ID=78A@ VGS=10V；
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7578
NCE7578
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
TJ,TSTG
Value
75
±20
78
55
300
30
160
1.07
550
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2
1 page  
http://www.ncepower.com
Figure7. BVDSS vs Junction Temperature
NCE7578
Pb-Free Product
Figure8. VGS(th) vs Junction Temperature
Figure9. Capacitance
Figure10. Gate charge waveforms
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.2
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE7578.PDF ] | |
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