NCE75H21T PDF даташит
Спецификация NCE75H21T изготовлена «NCE Power» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET». |
|
Детали детали
Номер произв | NCE75H21T |
Описание | NCE N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power |
логотип |
7 Pages
No Preview Available ! |
http://www.ncepower.com
Pb Free Product
NCE75H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
● VDSS =75V,ID =210A
RDS(ON) < 4mΩ @ VGS=10V
Schematic diagram
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21T
NCE75H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100℃)
IDM
PD
Single pulse avalanche energy (Note 4)
EAS
Limit
75
±20
210
150
840
330
2.2
2200
Unit
V
V
A
A
A
W
W/℃
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.2
No Preview Available ! |
http://www.ncepower.com
Pb Free Product
NCE75H21T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.455
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=75V,VGS=0V
VGS=±20V,VDS=0V
75
1
±200
V
μA
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
25℃
Drain-Source On-State Resistance
125℃
RDS(ON)
VGS=10V, ID=40A
2.9 4
4.7 6.5
mΩ
mΩ
Forward Transconductance
Dynamic Characteristics
gFS
VDS=25V,ID=40A
100 165
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
11000
914
695
PF
PF
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
ID=30A,VDD=30V,VGS=10V
-
-
-
23
190
130
120
250
48
98
nS
nS
nS
nS
nC
nC
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
trr TJ = 25°C, IF = 40A
Qrr di/dt = 100A/μs(Note2)
1.2
48
78
V
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition:Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH,Rg=25Ω,IAS=37A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.2
No Preview Available ! |
http://www.ncepower.com
Test circuit
1)EAS test Circuit
Pb Free Product
NCE75H21T
2)Gate charge test Circuit
3)Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.2
Скачать PDF:
[ NCE75H21T.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NCE75H21 | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE75H21B | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
NCE75H21D | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE75H21T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |