K1061 PDF даташит
Спецификация K1061 изготовлена «Toshiba» и имеет функцию, называемую «MOSFET ( Transistor ) - 2SK1061». |
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Детали детали
Номер произв | K1061 |
Описание | MOSFET ( Transistor ) - 2SK1061 |
Производители | Toshiba |
логотип |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
2SK1061
Unit: mm
• Excellent switching times: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
• Low on resistance: RDS (ON) = 0.6 Ω (typ.)
• Enhancement-mode
• Complementary to 2SJ167
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS 60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID
IDP
PD
Tch
Tstg
200
800
300
150
−55~150
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.13 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Drain-source ON voltage
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
⎪Yfs⎪
RDS (ON)
VDS (ON)
Ciss
Crss
Coss
VGS = ±10 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 50 mA
ID = 50 mA, VGS = 10 V
ID = 50 mA, VGS = 10 V
VDS = 10 V, VGS = 0, f = 1 MHz
Rise time
tr
2SK1061
Min Typ. Max Unit
⎯ ⎯ ±100 nA
⎯ ⎯ 10 μA
60 ⎯ ⎯
V
2 ⎯ 3.5 V
100 ⎯
⎯ mS
⎯ 0.6 1.0 Ω
⎯ 30 50 mV
⎯ 55 65 pF
⎯ 13 18 pF
⎯ 40 50 pF
⎯8⎯
Switching time
Turn-on time
ton
⎯ 14 ⎯
ns
Fall time
Turn-off Time
tf
D.U. <= 1%
toff VIN: tr, tf < 5 ns
(Zout = 50 Ω)
⎯ 35 ⎯
⎯ 75 ⎯
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
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2SK1061
3 2007-11-01
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Номер в каталоге | Описание | Производители |
K1060 | MOSFET ( Transistor ) - 2SK1060 | NEC |
K1061 | MOSFET ( Transistor ) - 2SK1061 | Toshiba |
K1062 | MOSFET ( Transistor ) - 2SK1062 | Toshiba |
K1065 | MOSFET ( Transistor ) - 2SK1065 | Sanyo |
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