NCE15H15T PDF даташит
Спецификация NCE15H15T изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE15H15T |
Описание | NCE N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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Pb Free Product
NCE15H15T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE15H15T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
● VDSS =150V,ID =150A
RDS(ON) < 8mΩ @ VGS=10V (Typ:6.6 mΩ)
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15H15T
NCE15H15T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Limit
150
±20
150
106
600
460
3.07
3100
18.5
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE15H15T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.33 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=150V,VGS=0V
VGS=±20V,VDS=0V
150 170
--
--
-
1
±200
V
μA
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 6.6
8
mΩ
Forward Transconductance
gFS
VDS=50V,ID=40A
150 -
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 21000
- 1446
-
-
PF
PF
Crss
- 1120
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
VDS=30V,ID=30A
VGS=10V
- 20
- 110
- 45
- 70
- 586
- 123
- 184
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
trr
TJ = 25°C, IF = 75A
- 71
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 106
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition:Tj=25℃,VDD=75V,VG=10V,L=0.5mH,Rg=25Ω
4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS,TJ ≤175°C
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE15H15T
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
NCE15H15T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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