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NCE15H15T PDF даташит

Спецификация NCE15H15T изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE15H15T
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE15H15T Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE15H15T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE15H15T uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =150V,ID =150A
RDS(ON) < 8m@ VGS=10V Typ6.6 m
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15H15T
NCE15H15T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Limit
150
±20
150
106
600
460
3.07
3100
18.5
Unit
V
V
A
A
A
W
W/
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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NCE15H15T Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE15H15T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.33 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=150V,VGS=0V
VGS=±20V,VDS=0V
150 170
--
--
-
1
±200
V
μA
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 6.6
8
m
Forward Transconductance
gFS
VDS=50V,ID=40A
150 -
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 21000
- 1446
-
-
PF
PF
Crss
- 1120
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=30V,ID=30A
VGS=10V
- 20
- 110
- 45
- 70
- 586
- 123
- 184
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
trr
TJ = 25°C, IF = 75A
- 71
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 106
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t 10 sec.
2. Pulse Test: Pulse Width 400μs, Duty Cycle 2%.
3. EAS conditionTj=25,VDD=75V,VG=10V,L=0.5mH,Rg=25
4. ISD125A, di/dt260A/μs, VDDV(BR)DSSTJ 175°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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NCE15H15T Даташит, Описание, Даташиты
http://www.ncepower.com
Test circuit
1EAS test Circuits
Pb Free Product
NCE15H15T
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.1










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Номер в каталогеОписаниеПроизводители
NCE15H15TNCE N-Channel Enhancement Mode Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor

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