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Спецификация HFS634 изготовлена «SemiHow» и имеет функцию, называемую «250V N-Channel MOSFET». |
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Детали детали
Номер произв | HFS634 |
Описание | 250V N-Channel MOSFET |
Производители | SemiHow |
логотип |
7 Pages
No Preview Available ! |
Dec 2005
HFS634
250V N-Channel MOSFET
BVDSS = 250 V
RDS(on) typ ȍ
ID = 8.1 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 30 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
250
8.1*
5.1*
32.4*
ρͤ͡
200
8.1
7.4
5.5
PD Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
38
0.3
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.29
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ
ఁ
ఁ
Units
ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 4.05 A
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ
ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125ఁ
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
250
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 125 V, ID = 8.1 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 200 V, ID = 8.1 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 8.1 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 8.1 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.36 0.45
V
ש
-- -- V
0.27 -- ·͠ఁ
-- 1 Ꮃ
-- 10 Ꮃ
-- 100 Ꮂ
-- -100 Ꮂ
780 1000
95 125
20 25
Ꮔ
Ꮔ
Ꮔ
15 30
75 150
100 200
65 130
30 38
4.0 --
15 --
Ꭸ
Ꭸ
Ꭸ
Ꭸ
Οʹ
Οʹ
Οʹ
-- 8.1
-- 32.4
-- 1.5
170 --
0.9 --
A
V
Ꭸ
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=4.9mH, IAS=8.1A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
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Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
900
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
600
300
0
10-1
Coss
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 50V
10 VDS = 125V
VDS = 200V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 8.1 A
0
0 5 10 15 20 25 30 35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
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