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HFP730 PDF даташит

Спецификация HFP730 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «400V N-Channel MOSFET».

Детали детали

Номер произв HFP730
Описание 400V N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP730 Даташит, Описание, Даташиты
June 2005
HFP730
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ ȍ
ID = 5.5 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 18 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
5.5
3.5
22
ρ30
330
5.5
7.3
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.71
--
62.5
Units
ఁ͠Έ
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HFP730 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 2.75 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
400
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 200 V, ID = 5.5 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 320 V, ID = 5.5 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 5.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 5.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.8 1.0
V
ש
-- -- V
0.4 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
680 885
95 123
16 21
12 15
40 90
60 130
40 90
18 23 Οʹ
3.9 -- Οʹ
8.4 -- Οʹ
-- 5.5
-- 22
-- 1.5
265 --
2.3 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=19mH, IAS=5.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFP730 Даташит, Описание, Даташиты
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 80V
10 VDS = 200V
VDS = 320V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 5.5A
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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