HFP730 PDF даташит
Спецификация HFP730 изготовлена «SemiHow» и имеет функцию, называемую «400V N-Channel MOSFET». |
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Детали детали
Номер произв | HFP730 |
Описание | 400V N-Channel MOSFET |
Производители | SemiHow |
логотип |
8 Pages
No Preview Available ! |
June 2005
HFP730
400V N-Channel MOSFET
BVDSS = 400 V
RDS(on) typ ȍ
ID = 5.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 18 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
5.5
3.5
22
ρ30
330
5.5
7.3
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
73
0.58
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ
ఁ
ఁ
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.71
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 2.75 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ
ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125ఁ
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
400
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 200 V, ID = 5.5 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 320 V, ID = 5.5 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 5.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 5.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.8 1.0
V
ש
-- -- V
0.4 -- ·͠ఁ
-- 1 Ꮃ
-- 10 Ꮃ
-- 100 Ꮂ
-- -100 Ꮂ
680 885
95 123
16 21
Ꮔ
Ꮔ
Ꮔ
12 15 Ꭸ
40 90 Ꭸ
60 130 Ꭸ
40 90 Ꭸ
18 23 Οʹ
3.9 -- Οʹ
8.4 -- Οʹ
-- 5.5
-- 22
-- 1.5
265 --
2.3 --
A
V
Ꭸ
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=19mH, IAS=5.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡
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Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 80V
10 VDS = 200V
VDS = 320V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 5.5A
0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡
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