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HFS50N06 PDF даташит

Спецификация HFS50N06 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «60V N-Channel MOSFET».

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Номер произв HFS50N06
Описание 60V N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFS50N06 Даташит, Описание, Даташиты
July 2005
HFS50N06
60V N-Channel MOSFET
BVDSS = 60 V
RDS(on) = 18 mΩ
ID = 50 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 40 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Continuous (TC = 25)
Continuous (TC = 100)
Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
60
50*
35.4*
200*
ρ25
490
50
12
7.0
PD Power Dissipation (TC = 25)
- Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
48
0.32
-55 to +175
300
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.1
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
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HFS50N06 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 25 A
2.0 -- 4.0
-- 0.018 0.022
V
Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250
60 -- -- V
ΔBVDSS Breakdown Voltage Temperature
/ΔTJ Coefficient
ID = 250 , Referenced to25
--
0.06
--
V/
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150
-- -- 1
-- -- 10
IGSSF Gate-Body Leakage Current,
Forward
VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -25 V, VDS = 0 V
-- -- -100
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1600 2100
-- 600 780
-- 90 120
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 30 V, ID = 50 A,
RG = 25 Ω
(Note 4,5)
VDS = 48 V, ID = 50 A,
VGS = 10 V
(Note 4,5)
-- 15 40
-- 105 220
-- 60 130
-- 65 140
-- 40 52 nC
-- 10 -- nC
-- 17 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 50 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
-- 50
A
-- 200
-- 1.5 V
52 --
75 -- μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=230uH, IAS=50A, VDD=25V, RG=25:, Starting TJ =25qC
3. ISD50A, di/dt300A/μs, VDDBVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
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HFS50N06 Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 30V
10
VDS = 48V
8
6
4
2
Note
:
I
D
=
50
A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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