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HFP35N75 PDF даташит

Спецификация HFP35N75 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «75V N-Channel MOSFET».

Детали детали

Номер произв HFP35N75
Описание 75V N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP35N75 Даташит, Описание, Даташиты
Dec 2008
HFP35N75
75V N-Channel MOSFET
BVDSS = 75 V
RDS(on) typ= 24mΩ
ID = 35 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 40 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
75
35
25
140
±30
580
35
12
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
120
0.8
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.24
--
62.5
Units
/W
SEMIHOW REV.A0,Dec 2008









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HFP35N75 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 17.5 A
2.0 -- 4.0
-- 0.024 0.03
V
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250
75 -- -- V
ΔBVDSS Breakdown Voltage Temperature
/ΔTJ Coefficient
ID = 250 , Referenced to25
--
0.06
--
V/
IDSS Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V
VDS = 60 V, TC = 150
-- -- 1
-- -- 10
IGSSF Gate-Body Leakage Current,
Forward
VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -25 V, VDS = 0 V
-- -- -100
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1600 2100
-- 600 780
-- 90 120
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 37.5 V, ID = 35 A,
RG = 25
(Note 4,5)
VDS = 60 V, ID = 35 A,
VGS = 10 V
(Note 4,5)
-- 25 50
-- 120 240
-- 80 160
-- 85 170
-- 40 52 nC
-- 10 -- nC
-- 17 -- nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 35 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 35 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
-- 35
A
-- 140
-- 1.5 V
60 --
90 -- μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=635uH, IAS=35A, VDD=25V, RG=25, Starting TJ =25°C
3. ISD≤35A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Dec 2008









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HFP35N75 Даташит, Описание, Даташиты
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 15V
10 VDS = 37.5V
VDS = 60V
8
6
4
2
* Note : ID = 35 A
0
0 10 20 30 40 50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Dec 2008










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