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HFP2N60S PDF даташит

Спецификация HFP2N60S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFP2N60S
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP2N60S Даташит, Описание, Даташиты
March 2014
HFP2N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 2.0 A
FEATURES
ƒ Originative New Design
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 6.0 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower RDS(ON) ȍ 7\S #9GS=10V
ƒ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
2.0
1.35
8.0
ρ30
120
2.0
5.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
54
0.43
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
2.32
--
62.5
Units
ഒ:
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡









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HFP2N60S Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ᒺ
VGS = 10 V, ID = 1.0 A͑
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250ᒺ
ID = 250 ᒺ5HIHUHQFHGWRഒ
VDS = 600 V, VGS = 0 V͑
VDS = 480 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25 ש͑
͑
 1RWH 
VDS = 480V, ID = 2.0 A,
VGS = 10 V
 1RWH 
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
4.2 5.0
9
വ
-- -- 9
0.6 -- 9ഒ
-- 1 ᒺ
-- 10 ᒺ
-- 100 ᒹ
-- -100 ᒹ
280 365
37 48
6.0 8.0
ᓂ
ᓂ
ᓂ
9 28 ᓩ
25 60 ᓩ
24 58 ᓩ
28 66 ᓩ
6.0 8.0 Q&
1.3 -- Q&
2.6 -- Q&
-- 2.0
-- 8.0
-- 1.4
230 --
1.0 --
$
9
ᓩ
˩&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=2.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡









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HFP2N60S Даташит, Описание, Даташиты
Typical Characteristics
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
* Notes :
1. 300us Pulse Test
2. T = 25oC
C
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
9
VGS = 10V
6
V = 20V
GS
3
* Note : TJ = 25oC
0
012345
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
400
C Crss = Cgd
iss
300 Coss
200
* Note ;
Crss 1. VGS = 0 V
2. f = 1 MHz
100
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1
150oC
-55oC
* Notes :
1. VDS= 40V
2. 300us Pulse Test
0.1
2
4VGS, Gate-Sou6rce Voltage [V8]
10
Figure 2. Transfer Characteristics
1
0.1
0.2
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.4 VSD, S0o.6urce-Dra0i.n8 Voltag1e.0[V] 1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 2.0A
0
02468
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡










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