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HFD4N50 PDF даташит

Спецификация HFD4N50 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFD4N50
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFD4N50 Даташит, Описание, Даташиты
July 2005
HFD4N50 / HFU4N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ ȍ
ID = 2.6 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 13 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD4N50
1
2
3
HFU4N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
2.6
1.64
10.4
ρͤ͑͡
440
2.6
4.5
4.5
PD
TJ, TSTG
TL
Total Power Dissipation (TA=25) *
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡









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HFD4N50 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ͑
VGS = 10 V, ID = 1.3 A͑
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ͑
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
VDS = 500 V, VGS = 0 V͑
VDS = 400 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 3.4 A,
RG = 25 ש͑
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 400 V, ID = 3.4 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2.6 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 3.4 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
2.0 2.7
V
ש͑
-- -- V
0.38 -- ·͠ఁ͑
-- 1 Ꮃ͑
-- 10 Ꮃ͑
-- 100 Ꮂ͑
-- -100 Ꮂ͑
450 590
70 90
10 17
Ꮔ͑
Ꮔ͑
Ꮔ͑
15 30 Ꭸ͑
70 140 Ꭸ͑
30 60 Ꭸ͑
40 80 Ꭸ͑
13 17 Οʹ͑
4.0 -- Οʹ͑
6.0 -- Οʹ͑
-- 2.6
-- 10.4
-- 1.4
220 --
1.3 --
A
V
Ꭸ͑
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=68mH, IAS=3.4A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡









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HFD4N50 Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 3.4A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͑͡͡










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