HFI9N50 PDF даташит
Спецификация HFI9N50 изготовлена «SemiHow» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | HFI9N50 |
Описание | N-Channel MOSFET |
Производители | SemiHow |
логотип |
8 Pages
No Preview Available ! |
June 2005
HFW9N50 / HFI9N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ = 0.58 Ω
ID = 9.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D2-PAK I2-PAK
HFW9N50
HFI9N50
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.7
36
±30
360
9.0
14.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.85
40
62.5
Units
℃/W
◎ SEMIHOW REV.A0 June 2005
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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 4.5 A
2.5
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125℃
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 9.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 400V, ID = 9.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.58 0.73
V
Ω
-- -- V
0.55 -- V/℃
-- 1 ㎂
-- 10 ㎂
-- 100 ㎁
-- -100 ㎁
1300
150
24
1700
195
31
㎊
㎊
㎊
35 70
120 240
70 140
80 160
35 45
7.3 --
17 --
㎱
㎱
㎱
㎱
nC
nC
nC
-- 9.0
-- 36
-- 1.4
320 --
2.8 --
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=9.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤9.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0 June 2005
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Typical Characteristics
Top :
VGS
15 V
10 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Note :
1. 250μ s Pulse Test
2. TC = 25 ℃
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.8
1.6
VGS = 10V
1.4
1.2 VGS = 20V
1.0
0.8
0.6
※
Note
:
T
J
=
25
℃
0.4
0 5 10 15 20 25 30
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C Crss = Cgd
iss
1200
Coss
※ Note ;
600
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150 ℃
25℃
-55 ℃
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150 ℃
0.4
25℃
※ Note :
1. VGS = 0V
2. 250μ s Pulse Test
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
※
Note
:
I
D
=
9.0
A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0 June 2005
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