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HFP9N50 PDF даташит

Спецификация HFP9N50 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFP9N50
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFP9N50 Даташит, Описание, Даташиты
June 2005
HFP9N50
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ ȍ
ID = 9.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0
5.7
36
ρͤ͡
360
9.0
14.7
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.85
--
62.5
Units
ఁ͠Έ
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HFP9N50 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 4.5 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 9.0 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 400V, ID = 9.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.58 0.73
V
ש
-- -- V
0.55 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
1300
150
24
1700
195
31
35 70
120 240
70 140
80 160
35 45
7.3 --
17 --
Οʹ
Οʹ
Οʹ
-- 9.0
-- 36
-- 1.4
320 --
2.8 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=9.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFP9N50 Даташит, Описание, Даташиты
Typical Characteristics
Top :
VGS
15 V
10 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
䈜㻌㻺㼛㼠㼑㻌㻦
ȝ V3XOVH7HVW
2. TC = 25
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.8
1.6
VGS = 10V
1.4
1.2 VGS = 20V
1.0
0.8
0.6
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25
0.4
0 5 10 15 20 25 30
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
1800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C Crss = Cgd
iss
1200
Coss
䈜㻌㻺㼛㼠㼑㻌㻧
600
Crss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150
25
-55
䈜㻌㻺㼛㼠㼑
1. VDS = 40V
ȝ V3XOVH7HVW
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
0.4
25
䈜㻌㻺㼛㼠㼑㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 100V
10 VDS = 250V
VDS = 400V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 9.0 A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͡͡










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