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HFD1N60 PDF даташит

Спецификация HFD1N60 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFD1N60
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFD1N60 Даташит, Описание, Даташиты
Dec 2005
HFD1N60 / HFU1N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 0.9 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 4.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N60
1
2
3
HFU1N60
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.9
0.57
3.6
ρ30
50
0.9
3.1
5.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
31
0.25
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.0
50
110
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͑͡͡









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HFD1N60 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ͑
VGS = 10 V, ID = 0.45 A͑
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ͑
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
VDS = 600 V, VGS = 0 V͑
VDS = 480 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 0.9 A,
RG = 25 ש͑
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 480 V, ID = 0.9 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 0.9 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 0.9 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
9.5 12
V
ש͑
-- -- V
0.65 -- ·͠ఁ͑
-- 1 Ꮃ͑
-- 10 Ꮃ͑
-- 100 Ꮂ͑
-- -100 Ꮂ͑
155 200
24 31
6.0 7.5
Ꮔ͑
Ꮔ͑
Ꮔ͑
12 30 Ꭸ͑
40 140 Ꭸ͑
20 60 Ꭸ͑
30 80 Ꭸ͑
4.0 5.5 Οʹ͑
1.0 -- Οʹ͑
2.0 -- Οʹ͑
-- 0.9
-- 3.6
-- 1.4
160 --
0.45 --
A
V
Ꭸ͑
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=115mH, IAS=0.9A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͑͡͡









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HFD1N60 Даташит, Описание, Даташиты
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
Ciss = Cgs + Cgd (Cds = shorted)
C Coss = Cds + Cgd
iss Crss = Cgd
200
150
100 Coss
䈜㻌㻺㼛㼠㼑㻌㻧
Crss
1. VGS = 0 V
2. f = 1 MHz
50
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
* Notes : I = 0.9 A
D
0
012345
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͑͡͡










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