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HFS8N60S PDF даташит

Спецификация HFS8N60S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFS8N60S
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFS8N60S Даташит, Описание, Даташиты
Dec 2006
HFS8N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 7.5 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 22 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
7.5*
4.6*
30*
ρ30
230
7.5
14.7
4.5
PD Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
48
0.38
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡









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HFS8N60S Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.75 A
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7.5 A,
RG = 25 ש
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 480V, ID = 7.5 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.5 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.96 1.2
V
ש
-- -- V
0.65 -- ·͠ఁ
-- 1
-- 10
-- 100
-- -100
940 1220
105 135
13 17
17 45
61 130
81 170
65 140
22 29 Οʹ
5 -- Οʹ
9 -- Οʹ
-- 7.5
-- 30
-- 1.4
365 --
3.4 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.3mH, IAS=7.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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HFS8N60S Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3.5
3.0
2.5
VGS = 10V
2.0 VGS = 20V
1.5
1.0
Note : T = 25oC
J
0.5
0 4 8 12 16
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150oC
25oC
Note :
1. VGS = 0V
2. 250Ps Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8 VDS = 480V
6
4
2
* Note : ID=7.5A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡










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