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HFS2N65S PDF даташит

Спецификация HFS2N65S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFS2N65S
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFS2N65S Даташит, Описание, Даташиты
Sep 2009
HFS2N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 5.0 Ω
ID = 1.8 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 6.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 5.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
1.8*
1.1*
7.2*
±30
100
1.8
5.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
23
0.18
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
5.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
Units
℃/W
SEMIHOW REV.A0,Sep 2009









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HFS2N65S Даташит, Описание, Даташиты
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 0.9 A
2.0
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to 25℃
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
650
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 1.8 A,
RG = 25
(Note 4,5)
VDS = 520V, ID = 1.8 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.8 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.8 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
5.0 6.5
V
-- -- V
0.6 -- V/℃
-- 1
-- 10
-- 100
-- -100
280 365
37 48
6.0 8.0
9 28
25 60
24 58
28 66
6.0 8.0 nC
1.3 -- nC
2.6 -- nC
-- 1.8
-- 7.2
-- 1.4
230 --
1.0 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=1.8A, VDD=50V, RG=25, Starting TJ =25°C
3. ISD≤1.8A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Sep 2009









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HFS2N65S Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
12
9 VGS = 10V
6
VGS = 20V
3
* Note : TJ = 25oC
0
0
1 ID, D2rain Curren3t[A]
4
5
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
VDS, Drain-Source Voltage[V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 130V
10 VDS = 325V
VDS = 520V
8
6
4
2
* Note : I = 1.8A
D
0
02468
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Sep 2009










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