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HFS12N65S PDF даташит

Спецификация HFS12N65S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFS12N65S
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFS12N65S Даташит, Описание, Даташиты
Aug 2009
HFS12N65S
650V N-Channel MOSFET
BVDSS = 650 V
RDS(on) typ = 0.67 ȍ
ID = 12 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 38 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.67 ȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
12*
7.4*
48*
ρ30
860
12
22.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
51
0.41
-55 to +150
300
*Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.43
62.5
Units
/W
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HFS12N65S Даташит, Описание, Даташиты
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 6.0 A
2.0
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
650
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 12 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520V, ID = 12 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 12.0 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.67 0.78
V
Ÿ
-- -- V
0.5 -- V/
-- 1
-- 10
-- 100
-- -100
1835
185
16
2385
240
21
30 70
85 180
140 280
90 190
38 49
8 --
13 --
nC
nC
nC
-- 12
-- 48
-- 1.4
420 --
4.9 --
A
V
ȝC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=11mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”12A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ” 300ȝs, Duty Cycle ” 2%
5. Essentially Independent of Operating Temperature
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HFS12N65S Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
2.0
1.5 V = 10V
GS
1.0
V = 20V
GS
0.5
0.0
0
* Note : T = 25oC
J
5 10 15 20 25 30 35
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
3500
3000
2500
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
2000
1500
1000
500
C
oss
C
rss
Note ;
1. V = 0 V
GS
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 130V
DS
10 V = 325V
DS
V = 520V
DS
8
6
4
2
* Note : I = 12.0A
D
0
0 4 8 12 16 20 24 28 32 36 40
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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