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Datasheet HFB1N70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HFB1N70 | N-Channel MOSFET HFB1N70
Jan 2007
HFB1N70
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate C |  SemiHow | mosfet |
| 2 | HFB1N70S | N-Channel MOSFET HFB1N70S
Dec 2012
HFB1N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ ȍ ID = 0.3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate | SemiHow | mosfet |
HFB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFB03 | High Frequency Ferrite Beads RoHS
HFB03 & 05
Dimensions: HFB03
0.039±0.006 (0.99±0.15) 0.020±0.006 (0.51±0.15) 0.020±0.006 (0.51±0.15)
High Frequency Ferrite Beads
Inches (mm) HFB05
0.063±0.008 (1.60±0.20) 0.031±0.006 (0.79±0.15) 0.031±0.006 (0.79±0.15)
0.010±0.006 (0.25±0.15) 0.016 (0.41)
0.016±0.008 (0.41±  Allied Components International data | | |
| 2 | HFB05 | High Frequency Ferrite Beads RoHS
HFB03 & 05
Dimensions: HFB03
0.039±0.006 (0.99±0.15) 0.020±0.006 (0.51±0.15) 0.020±0.006 (0.51±0.15)
High Frequency Ferrite Beads
Inches (mm) HFB05
0.063±0.008 (1.60±0.20) 0.031±0.006 (0.79±0.15) 0.031±0.006 (0.79±0.15)
0.010±0.006 (0.25±0.15) 0.016 (0.41)
0.016±0.008 (0.41± Allied Components International data | | |
| 3 | HFB06TB120 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.382 rev. D 12/00
HFA06TB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
BASE CATHODE
VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr (typ.)= 116nC
4
2
IR  International Rectifier diode | | |
| 4 | HFB08PB120 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.365 rev. B 11/00
HFA08PB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
1 CATHODE
BASE CATHODE
VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140 International Rectifier diode | | |
| 5 | HFB08TB120 | Ultrafast/ Soft Recovery Diode Bulletin PD -2.383 rev. C 11/00
HFA08TB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
BASE CATHODE
Features
• • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
4
VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC
2
1 International Rectifier diode | | |
| 6 | HFB08TB120PBF | SOFT RECOVERY DIODE PD-95736
HFA08TB120PbF
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free
BASE CATHODE
VR = 1200V VF (typ.)* = 2.4V IF (AV) = 8.0A Qrr (typ.)= 140nC IRRM (typ.) = 4.5A
International Rectifier diode | | |
| 7 | HFB12PA120C | Soft Recovery Diode PD -2.362 rev. C 01/2000
HFA12PA120C
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions
VR = 1200V VF(typ.)* = 2.4V IF(AV) = 6A Qrr International Rectifier diode | |
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