HFU1N80 PDF даташит
Спецификация HFU1N80 изготовлена «SemiHow» и имеет функцию, называемую «N-Channel MOSFET». |
|
Детали детали
Номер произв | HFU1N80 |
Описание | N-Channel MOSFET |
Производители | SemiHow |
логотип |
8 Pages
No Preview Available ! |
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 13 Ω
ID = 1.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N80
1
2
3
3
HFU1N80
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
1.0
0.63
4.0
±30
90
1.0
4.5
4.0
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
◎ SEMIHOW REV.A0,April 2006
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Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 0.5 A
2.5
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125℃
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 1.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 640 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
13 16
V
Ω
-- -- V
1.0 -- V/℃
-- 1 ㎂
-- 10 ㎂
-- 100 ㎁
-- -100 ㎁
150 195
20 26
5.5 7.2
㎊
㎊
㎊
12 30 ㎱
40 90 ㎱
25 60 ㎱
45 100 ㎱
7.5 10.0 nC
1.2 -- nC
4.5 -- nC
-- 1.0
-- 4.0
-- 1.4
310 --
0.8 --
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,April 2006
Downloaded from Elcodis.com electronic components distributor
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Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
40
35
30 VGS = 10V
25 VGS = 20V
20
15
※
Note
:
T
J
=
25
℃
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
Ciss = Cgs + Cgd (Cds = shorted)
Ciss
Coss = Cds + Cgd
Crss = Cgd
200
150
Coss
100
※ Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
50
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 160V
VDS = 400V
8 VDS = 640V
6
4
2
※
Notes
:
I
D
=
1.0
A
0
012345678
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Downloaded from Elcodis.com electronic components distributor
◎ SEMIHOW REV.A0,April 2006
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