DataSheet26.com

HFU1N80 PDF даташит

Спецификация HFU1N80 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFU1N80
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

8 Pages
scroll

No Preview Available !

HFU1N80 Даташит, Описание, Даташиты
April 2006
HFD1N80 / HFU1N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 13 Ω
ID = 1.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD1N80
1
2
3
3
HFU1N80
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Drain Current
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
800
1.0
0.63
4.0
±30
90
1.0
4.5
4.0
2.5
45
0.36
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.78
50
110
Units
℃/W
SEMIHOW REV.A0,April 2006
Downloaded from Elcodis.com electronic components distributor









No Preview Available !

HFU1N80 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 0.5 A
2.5
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 400 V, ID = 1.0 A,
RG = 25
(Note 4,5)
VDS = 640 V, ID = 1.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
13 16
V
-- -- V
1.0 -- V/℃
-- 1
-- 10
-- 100
-- -100
150 195
20 26
5.5 7.2
12 30
40 90
25 60
45 100
7.5 10.0 nC
1.2 -- nC
4.5 -- nC
-- 1.0
-- 4.0
-- 1.4
310 --
0.8 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=170mH, IAS=1.0A, VDD=50V, RG=25, Starting TJ =25°C
3. ISD≤1.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,April 2006
Downloaded from Elcodis.com electronic components distributor









No Preview Available !

HFU1N80 Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
40
35
30 VGS = 10V
25 VGS = 20V
20
15
Note
:
T
J
=
25
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
Ciss = Cgs + Cgd (Cds = shorted)
Ciss
Coss = Cds + Cgd
Crss = Cgd
200
150
Coss
100
Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
50
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 160V
VDS = 400V
8 VDS = 640V
6
4
2
Notes
:
I
D
=
1.0
A
0
012345678
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Downloaded from Elcodis.com electronic components distributor
SEMIHOW REV.A0,April 2006










Скачать PDF:

[ HFU1N80.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HFU1N80N-Channel MOSFETSemiHow
SemiHow

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск