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PDF HFD3N80 Data sheet ( Hoja de datos )
| Número de pieza | HFD3N80 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Dec 2005
HFD3N80/HFU3N80
800V N-Channel MOSFET
BVDSS = 800 V
RDS(on) typ = 4.0 Ω
ID = 2.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD3N80
1
2
3
HFU3N80
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
800
2.5
1.57
10
±30
320
2.5
7.0
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25℃) *
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
70
0.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.78
50
110
Units
℃/W
◎ SEMIHOW REV.A0,Dec 2005
1 page  
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
100 10 ms
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 1.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature [ ℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
※ Notes :
1. Zθ JC(t) = 1.78 ℃/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Dec 2005
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HFD3N80.PDF ] | |
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