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HFH6N90 PDF даташит

Спецификация HFH6N90 изготовлена ​​​​«SemiHow» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв HFH6N90
Описание N-Channel MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HFH6N90 Даташит, Описание, Даташиты
Mar 2010
HFH6N90
900V N-Channel MOSFET
BVDSS = 900 V
RDS(on) typ = 1.95 Ω
ID = 6.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 35 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
6.0
3.8
24
±30
650
6.0
19.8
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
198
1.59
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.63
--
40
Units
℃/W
SEMIHOW REV.A0,Mar 2010









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HFH6N90 Даташит, Описание, Даташиты
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.0 A
2.5
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to25℃
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
900
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 450 V, ID = 6.0 A,
RG = 25
(Note 4,5)
VDS = 720V, ID = 6.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 6.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 6.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
--
1.95
4.5
2.4
V
-- -- V
1.03 -- V/℃
-- 1
-- 10
-- 100
-- -100
1550
110
15
2010
145
20
40 80
120 240
60 120
70 140
35 45
10 --
13 --
nC
nC
nC
-- 6.0
-- 24
-- 1.4
780 --
9.0 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=34mH, IAS=6.0A, VDD=50V, RG=25, Starting TJ =25°C
3. ISD≤6.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
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HFH6N90 Даташит, Описание, Даташиты
Typical Characteristics
Top :
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
4.5
4.0
3.5 VGS = 10V
3.0 VGS = 20V
2.5
2.0
Note
:
T
J
=
25
1.5
0 3 6 9 12 15 18
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
500
0
10-1
Coss Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
Notes :
1. VDS = 50V
2. 250μ s Pulse Test
10-1
2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150 25
10-1
0.2
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 180V
10 VDS = 450V
VDS = 720V
8
6
4
2
Note
:
I
D
=
6.0A
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
SEMIHOW REV.A0,Mar 2010










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