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85N3LH5 PDF даташит

Спецификация 85N3LH5 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «STD85N3LH5».

Детали детали

Номер произв 85N3LH5
Описание STD85N3LH5
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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85N3LH5 Даташит, Описание, Даташиты
STD85N3LH5
STP85N3LH5 - STU85N3LH5
N-channel 30 V, 0.0042 , 80 A, DPAK, TO-220, IPAK
STripFET™ V Power MOSFET
Features
www.DataSheet4U.com Type
STD85N3LH5
STP85N3LH5
STU85N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
< 0.005
< 0.0054
< 0.0054
ID
80 A
80 A
80 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD85N3LH5
STP85N3LH5
STU85N3LH5
Marking
85N3LH5
85N3LH5
85N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2008
Rev 5
1/16
www.st.com
16









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85N3LH5 Даташит, Описание, Даташиты
Contents
Contents
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
1
2
www.DataSheet4U3.com
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/16









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85N3LH5 Даташит, Описание, Даташиты
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
1 Electrical ratings
Electrical ratings
www.DataSheet4U.com
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VDS
VGS
ID (1)
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Drain-source voltage (VGS = 0) @ TJMAX
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering purpose
Value
30
35
± 22
80
55
320
70
0.47
165
-55 to 175
175
Value
2.14
100
275
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
Unit
°C/W
°C/W
°C
3/16










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Номер в каталогеОписаниеПроизводители
85N3LH5STD85N3LH5STMicroelectronics
STMicroelectronics

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