DataSheet26.com

NCE08N50D PDF даташит

Спецификация NCE08N50D изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET».

Детали детали

Номер произв NCE08N50D
Описание N-Channel Super Junction Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

10 Pages
scroll

No Preview Available !

NCE08N50D Даташит, Описание, Даташиты
NCE08N50D,NCE08N50,NCE08N50F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON)
ID
560
600
7.8
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE08N50D
TO-263
NCE08N50D
NCE08N50
TO-220
NCE08N50
NCE08N50F
TO-220F
NCE08N50F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 400 V, ID = 7.8 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
NCE08N50D
NCE08N50
NCE08N50F
500
±30
7.8 7.8*
5 5*
23.4 23.4*
50
83 32
0.67 0.26
230
7.8
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.2









No Preview Available !

NCE08N50D Даташит, Описание, Даташиты
NCE08N50D,NCE08N50,NCE08N50F
Parameter
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
Symbol
EAR
NCE08N50D
NCE08N50
NCE08N50F
0.5
Unit
mJ
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
TJ,TSTG
-55...+150
°C
Table 2. Thermal Characteristic
Parameter
Symbol
NCE08N50D
NCE08N50
NCE08N50F
Unit
Thermal ResistanceJunction-to-CaseMaximum
RthJC
1.5
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
3.9 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=500V,VGS=0V
VDS=500V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4.5A
500
1
100
±100
2.5 3
3.5
540 600
V
μA
μA
nA
V
m
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
Switching times
gFS VDS = 20V, ID = 4.5A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=400V,ID=7.8A,
VGS=10V
Qgd
RG f = 1 MHz open drain
6
860
68
5
19.5 27
3
7
1.6
S
pF
pF
pF
nC
nC
nC
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
td(on)
tr
td(off)
tf
VDD=380V,ID=7.8A,
RG=12,VGS=10V
6
3.5
60 100
7 15
nS
nS
nS
nS
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak reverse recovery current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=7.8A,VGS=0V
trr
Qrr Tj=25°C,IF=7.8A,di/dt=100A/μs
Irrm
7.8
23.4
0.9 1.3
250
2.6
21
A
A
V
nS
uC
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.2









No Preview Available !

NCE08N50D Даташит, Описание, Даташиты
NCE08N50D,NCE08N50,NCE08N50F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for NCE08N50F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.2










Скачать PDF:

[ NCE08N50D.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NCE08N50N-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor
NCE08N50DN-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor
NCE08N50FN-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor
NCE08N50IN-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск