NCE05N50L PDF даташит
Спецификация NCE05N50L изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET». |
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Детали детали
Номер произв | NCE05N50L |
Описание | N-Channel Super Junction Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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NCE05N50L
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS @Tjmax
RDS(ON)
ID
560
900
5
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N50L
TO-251S
NCE05N50
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 400 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
TO-251S
NCE05N50L
500
±30
5
3
15
50
50
0.4
130
5
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
v1.2
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NCE05N50L
Parameter
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
EAR
TJ,TSTG
Symbol
RthJC
RthJA
Value
0.4
-55...+150
NCE05N60L
2.5
75
Unit
mJ
°C
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=500V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=500V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID =3A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=400V,ID=5A,
VGS=10V
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=5A,
RG=18Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=5A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min Typ Max
500
1
50
±100
2.5 3
3.5
850 900
5
520
52
4.5
13 25
2.2
5
2.6
6
2.5
55 80
9 14
5
15
1 1.3
200
1.6
15
Unit
V
μA
μA
nA
V
mΩ
S
PF
PF
PF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE05N50L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE05N50L
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Номер в каталоге | Описание | Производители |
NCE05N50L | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
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